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Systematic study on temperature and time‑varying characteristics of SiC MOSFET static parameters at 200 °C
Soft switching circuit of high‑frequency active neutral point clamped inverter based on SiC/Si hybrid device
Jianing Wang Yuanwu Xun Xiaohui Liu Shaolin Yu Nan Jiang
Vol. 21, No. 1, pp. 71-84, Jan. 2021
10.1007/s43236-020-00166-9
Vol. 21, No. 1, pp. 71-84, Jan. 2021
10.1007/s43236-020-00166-9